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FTK08DFN データシート(PDF) 2 Page - First Silicon Co., Ltd

部品番号. FTK08DFN
部品情報  Dual P-Channel Power MOSFET
ダウンロード  4 Pages
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メーカー  FS [First Silicon Co., Ltd]
ホームページ  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK08DFN Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK08DFN データシート HTML 1Page - First Silicon Co., Ltd FTK08DFN データシート HTML 2Page - First Silicon Co., Ltd FTK08DFN データシート HTML 3Page - First Silicon Co., Ltd FTK08DFN データシート HTML 4Page - First Silicon Co., Ltd  
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2014.10. 10
2/4
FTK08DFN
Revision No : 0
Thermal Resistance from Junction to Ambient(Note1b)
RθJA
173
℃/W
Thermal Resistance from Junction to Ambient(Note1c)
RθJA
69
℃/W
Thermal Resistance from Junction to Ambient(Note1d)
RθJA
151
℃/W
T
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
J
j
150
T
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
stg
-55 ~+150
Notes:1. RθJA is determined with the device mounted on a 1.5 x 1.5 in. PCB of FR-4 material.
(a) when mounted on a 1 in pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation.
2
(b) when mounted on a minimum pad of 2 oz copper. For single operation.
(c) when mounted on a 1 in
2pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation.
(d) when mounted on a minimum pad of 2 oz copper. For dual operation.
Electrical characteristics (Ta=25
℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
On/Off Characteristics
Drain-source breakdown voltage
(BR)DSS
VGS = 0V, ID =-250µA
-20
V
e
g
a
t
l
o
v
d
l
o
h
s
e
r
h
t
te-
a
G
GS(th)
VDS =VGS, I D=-250µA
-0.4
-1
V
Gate-body leakage current
GSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
DSS
VDS =-16V, VGS =0V
-1
µA
VGS =-4.5V, ID =-3.6A
60
VGS =-2.5V, ID =-3A
80
VGS =-1.8V, ID =-2A
110
Drain-source on-state resistance (Note 2)
DS(on)
VGS =-1.5V, ID =-1A
170
mΩ
Forward transconductance (Note 2)
FS
VDS =-10V, ID =-2.7A
5.5
S
Charges , Capacitances and Gate resistance(Note3)
C
e
c
n
a
t
i
c
a
p
a
c
t
u
p
n
I
iss
480
C
e
c
n
a
t
i
c
a
p
a
c
t
u
p
t
u
O
oss
46
Reverse transfer capacitance
rss
VDS =-15V,VGS=0V,f =1MHz
10
pF
Q
e
g
r
a
h
c
e
t
a
g
l
a
t
o
T
g
7.2
Q
e
g
r
a
h
c
e
c
r
u
o
s
-
e
t
a
G
gs
2.2
Q
e
g
r
a
h
c
n
i
a
r
d
-
e
t
a
G
gd
VDS =-4.5V,VGS=-6V,ID =-2.8A
1.2
nC
Switching times (Note3)
t
e
m
i
t
y
a
l
e
d
n
o
-
n
r
u
T
d(on)
38
t
e
m
i
t
e
s
i
R
r
25
t
e
m
i
t
y
a
l
e
d
f
f
o
-
n
r
u
T
d(off)
43
t
e
m
i
t
ll
a
F
f
VDS=-6V,ID =-2.8A,
VGS=-4.5V,RG=6Ω
5
ns
Source-drain diode characteristics
Forward on voltage (Note2)
SD
VGS =0V, IS =-1A
-0.8
V
Notes:
2. Pulse Test : Pulse width≤300µs, duty cycle ≤ 2%.
3. These parameters have no way to verify.
V
V
I
I
R
g
C


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