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データシートサーチシステム |
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データシートサーチシステム |
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FTK0404PSOT883 データシート(PDF) 1 Page - First Silicon Co., Ltd |
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FTK0404PSOT883 Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1. FEATURES ● VDS = -20V RDS(ON)≤ 0.48 Ω,VGS@-4.5V,IDS@-780mA RDS(ON)≤ 0.67 Ω,VGS@-2.5V,IDS@-660mA RDS(ON)≤ 0.95 Ω,VGS@-1.8V,IDS@-100mA RDS(ON)≤ 2.2 Ω,VGS@-1.5V,IDS@-100mA ● Super high density cell design for extremely low RDS(ON). ● Exceptional on-resistance and maximum DC current capability. ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 2. APPLICATIONS ● Power Management in Notebook ● Portable Equipment ● Battery Powered System 3. DEVICE MARKING AND ORDERING INFORMATION 4. MAXIMUM RATINGS(Ta = 25ºC) Note 1: Surface Mounted on 1” x 1” FR4 Board. Limits -20 ±6 Parameter Drain −to−Source Voltage Gate −to−Source Voltage Drain Current (Note 1) Steady State ID A Symbol VGS V 20V, P-Channel (D-S) MOSFET Unit VDSS Marking Shipping FTK0404PSOT883 T5 10000/Tape&Reel V Device -1.4 SEMICONDUCTOR TECHNICAL DATA FTK0404PSOT883 2018. 06. 21 1/5 Revision No : 0 SOT-883 |
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