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データシートサーチシステム |
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データシートサーチシステム |
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FTK0903P データシート(PDF) 1 Page - First Silicon Co., Ltd |
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FTK0903P Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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-100V P-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -100 V VGS Gate-Sou rce Voltage ±25 V ID Drain Current – Continuous (TC=25℃) -24 A Drain Current – Continuous (TC=100℃) -15.1 A IDM Drain Current – Pulsed 1 -96 A PD Power Dissipation (TC=25℃) 125 W Power Dissipation – Derate above 25℃ 1 W/℃ TSTG Storage Temperature Range -50 to 150 ℃ TJ Operating Junction Temperature Range -50 to 150 ℃ BVDSS RDSON ID -100V 95m Ω -24A Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 1.0 ℃/W These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. -100V,-25A, RDS(ON) =95 mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Thermal Characteristics TO-220 Pin Configuration D G S Networking Load Switch LED applications SEMICONDUCTOR TECHNICAL DATA FTK0903P 2019. 06. 14 1/5 Revision No : 0 1 1. Gate 2. Drain 3. Source 3 2 |
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