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FTK0903P データシート(PDF) 2 Page - First Silicon Co., Ltd

部品番号. FTK0903P
部品情報  -100V P-Channel MOSFETs
ダウンロード  5 Pages
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メーカー  FS [First Silicon Co., Ltd]
ホームページ  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0903P Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK0903P データシート HTML 1Page - First Silicon Co., Ltd FTK0903P データシート HTML 2Page - First Silicon Co., Ltd FTK0903P データシート HTML 3Page - First Silicon Co., Ltd FTK0903P データシート HTML 4Page - First Silicon Co., Ltd FTK0903P データシート HTML 5Page - First Silicon Co., Ltd  
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-100V P-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-100
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
0.06
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=-100V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-80V , VGS=0V , TJ=125℃
---
---
-10
uA
IGSS
Gate-Source Leakage Current
VGS=± 25V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V , ID=-6A
---
75
95
VGS=-4.5V , ID=-3A
---
80
110
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.2
-1.6
-2.2
V
VGS(th)
VGS(th) Temperature Coefficient
---
-4.46
---
mV/℃
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=-50V , VGS=-10V , ID=-5A
---
40.4
70
nC
Qgs
Gate-Source Charge2 , 3
---
7.7
15
Qgd
Gate-Drain Charge2 , 3
---
6.6
13
Td(on)
Turn-On Delay Time2 , 3
VDD=-30V , VGS=-10V , RG=6Ω
ID=-1A
---
27
54
ns
Tr
Rise Time2 , 3
---
12
24
Td(off)
Turn-Off Delay Time2 , 3
---
150
300
Tf
Fall Time2 , 3
---
45
90
Ciss
Input Capacitance
VDS=-30V , VGS=0V , F=1MHz
---
2250
3900
pF
Coss
Output Capacitance
---
130
250
Crss
Reverse Transfer Capacitance
---
90
180
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
10
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
-24
A
ISM
Pulsed Source Current
---
---
-48
A
VSD
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time2
IS=-1A ,dI/dt=100A/µs TJ=25℃
---
---
---
ns
Qrr
Reverse Recovery Charge2
---
---
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2019. 06. 14
2/5
Revision No : 0
FTK0903P


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