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FTK0904D データシート(PDF) 1 Page - First Silicon Co., Ltd

部品番号. FTK0904D
部品情報  100V N-Channel MOSFETs
ダウンロード  5 Pages
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メーカー  FS [First Silicon Co., Ltd]
ホームページ  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0904D Datasheet(HTML) 1 Page - First Silicon Co., Ltd

  FTK0904D データシート HTML 1Page - First Silicon Co., Ltd FTK0904D データシート HTML 2Page - First Silicon Co., Ltd FTK0904D データシート HTML 3Page - First Silicon Co., Ltd FTK0904D データシート HTML 4Page - First Silicon Co., Ltd FTK0904D データシート HTML 5Page - First Silicon Co., Ltd  
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100V N-Channel MOSFETs
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
100
V
VGS
Gate-Sou
rce Voltage
± 20
V
ID
Drain Current – Continuous (TC=25℃)
25
A
Drain Current – Continuous (TC=100℃)
15
A
IDM
Drain Current – Pulsed
1
100
A
PD
Power Dissipation (TC=25℃)
73.5
W
Power Dissipation – Derate above 25℃
0.58
W/℃
TSTG
Storage Temperature Range
-50 to 150
TJ
Operating Junction Temperature Range
-50 to 150
BVDSS
RDSON
ID
100V
55m
Ω
25A
Symbol
Parameter
Typ.
Max.
Unit
RθJA
Thermal Resistance Junction to ambient
---
62
℃/W
RθJC
Thermal Resistance Junction to Case
---
1.7
℃/W
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology. This
advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency fast switching applications.
 100V,25A, RDS(ON) =55m
Ω@VGS = 10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available
General Description
Features
Applications
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Thermal Characteristics
TO-252 Pin Configuration
D
G
S
D
G
S
 Networking
 Load Switch
 LED applications
SEMICONDUCTOR
TECHNICAL DATA
FTK0904D
2018. 06. 14
1/5
Revision No : 0


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