 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
FTK0904P データシート(PDF) 1 Page - First Silicon Co., Ltd |
|
||||||||||||||||||||||||||||||
FTK0904P Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
|
|
1 / 5 page 
100V N-Channel MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Sou rce Voltage ±20 V ID Drain Current – Continuous (TC=25℃) 25 A Drain Current – Continuous (TC=100℃) 15 A IDM Drain Current – Pulsed 1 100 A PD Power Dissipation (TC=25℃) 125 W Power Dissipation – Derate above 25℃ 1 W/℃ TSTG Storage Temperature Range -50 to 150 ℃ TJ Operating Junction Temperature Range -50 to 150 ℃ BVDSS RDSON ID 100V 55m Ω 25A Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 1.0 ℃/W These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 100V,25A, RDS(ON) =55m Ω@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Applications Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) Thermal Characteristics TO-220 Pin Configuration D G S Networking Load Switch LED applications SEMICONDUCTOR TECHNICAL DATA FTK0904P 2018. 06. 14 1/5 Revision No : 0 1 1. Gate 2. Drain 3. Source 3 2 |
|
Japanese ▼ 
English
Chinese
German
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
