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FTK0904P データシート(PDF) 2 Page - First Silicon Co., Ltd

部品番号. FTK0904P
部品情報  100V N-Channel MOSFETs
ダウンロード  5 Pages
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メーカー  FS [First Silicon Co., Ltd]
ホームページ  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0904P Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK0904P データシート HTML 1Page - First Silicon Co., Ltd FTK0904P データシート HTML 2Page - First Silicon Co., Ltd FTK0904P データシート HTML 3Page - First Silicon Co., Ltd FTK0904P データシート HTML 4Page - First Silicon Co., Ltd FTK0904P データシート HTML 5Page - First Silicon Co., Ltd  
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100V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.05
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=100V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=10A
---
45
55
VGS=4.5V , ID=5A
---
50
60
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.5
V
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=3A
---
8.7
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=50V , VGS=10V , ID=5A
---
46
80
nC
Qgs
Gate-Source Charge2 , 3
---
4.5
9
Qgd
Gate-Drain Charge2 , 3
---
12
20
Td(on)
Turn-On Delay Time2 , 3
VDD=30V , VGS=10V , RG=3.3Ω
ID=1A
---
6.8
12
ns
Tr
Rise Time2 , 3
---
21
40
Td(off)
Turn-Off Delay Time2 , 3
---
32
60
Tf
Fall Time2 , 3
---
8.2
16
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
2860
4200
pF
Coss
Output Capacitance
---
120
180
Crss
Reverse Transfer Capacitance
---
70
105
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.2
2.4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
25
A
ISM
Pulsed Source Current
---
---
50
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time2
IS=1A , dI/dt=100A/µs TJ=25℃
---
---
---
ns
Qrr
Reverse Recovery Charge2
---
---
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2018. 06. 14
2/5
Revision No : 0
FTK0904P


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