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データシートサーチシステム |
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データシートサーチシステム |
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FTK0904P データシート(PDF) 2 Page - First Silicon Co., Ltd |
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FTK0904P Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page 
100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- 45 55 mΩ VGS=4.5V , ID=5A --- 50 60 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=3A --- 8.7 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=50V , VGS=10V , ID=5A --- 46 80 nC Qgs Gate-Source Charge2 , 3 --- 4.5 9 Qgd Gate-Drain Charge2 , 3 --- 12 20 Td(on) Turn-On Delay Time2 , 3 VDD=30V , VGS=10V , RG=3.3Ω ID=1A --- 6.8 12 ns Tr Rise Time2 , 3 --- 21 40 Td(off) Turn-Off Delay Time2 , 3 --- 32 60 Tf Fall Time2 , 3 --- 8.2 16 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 2860 4200 pF Coss Output Capacitance --- 120 180 Crss Reverse Transfer Capacitance --- 70 105 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.2 2.4 Ω Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 25 A ISM Pulsed Source Current --- --- 50 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time2 IS=1A , dI/dt=100A/µs TJ=25℃ --- --- --- ns Qrr Reverse Recovery Charge2 --- --- --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings 2018. 06. 14 2/5 Revision No : 0 FTK0904P |
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