データシートサーチシステム
Selected language   Japanese  ▼

Delete All
ON OFF
ALLDATASHEET.JP

X  

Preview PDF Download HTML

FTK0910S データシート(PDF) 2 Page - First Silicon Co., Ltd

部品番号. FTK0910S
部品情報  100V N-Channel MOS FETs
ダウンロード  5 Pages
Scroll/Zoom Zoom In 100% Zoom Out
メーカー  FS [First Silicon Co., Ltd]
ホームページ  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0910S Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK0910S データシート HTML 1Page - First Silicon Co., Ltd FTK0910S データシート HTML 2Page - First Silicon Co., Ltd FTK0910S データシート HTML 3Page - First Silicon Co., Ltd FTK0910S データシート HTML 4Page - First Silicon Co., Ltd FTK0910S データシート HTML 5Page - First Silicon Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
2017.5. 10
2/5
FTK0910S
Revision No : 0
Electrical Characteristics (TJ=25℃)
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.10
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=100V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=2A
---
161
200
mΩ
VGS=4.5V , ID=1A
---
169
210
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.8
2.5
V
VGS(th)
VGS(th) Temperature Coefficient
---
-4
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=1A
---
5
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=50V , VGS=10V , ID=2A
---
13.4
21
nC
Qgs
Gate-Source Charge2 , 3
---
2.9
6
Qgd
Gate-Drain Charge2 , 3
---
1.7
4
Td(on)
Turn-On Delay Time2 , 3
VDD=30V , VGS=10V , RG=3.3
ID=1A
---
1.6
3
ns
Tr
Rise Time2 , 3
---
6.6
13
Td(off)
Turn-Off Delay Time2 , 3
---
11.5
22
Tf
Fall Time2 , 3
---
3.6
7
Ciss
Input Capacitance
VDS=50V , VGS=0V , F=1MHz
---
820
1190
pF
Coss
Output Capacitance
---
35
55
Crss
Reverse Transfer Capacitance
---
20
30
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.3
2.6
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
2
A
ISM
Pulsed Source Current
---
---
8
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings


Html ページ

1  2  3  4  5 


Datasheet Download

Go To PDF Page


リンク URL



Privacy Policy
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   ブックマーク
   |   リンク交換   |   メーカーリスト
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn