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データシートサーチシステム |
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データシートサーチシステム |
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FTK0910S データシート(PDF) 2 Page - First Silicon Co., Ltd |
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FTK0910S Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2017.5. 10 2/5 FTK0910S Revision No : 0 Electrical Characteristics (TJ=25℃) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.10 --- V/℃ IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=2A --- 161 200 mΩ VGS=4.5V , ID=1A --- 169 210 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=1A --- 5 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=50V , VGS=10V , ID=2A --- 13.4 21 nC Qgs Gate-Source Charge2 , 3 --- 2.9 6 Qgd Gate-Drain Charge2 , 3 --- 1.7 4 Td(on) Turn-On Delay Time2 , 3 VDD=30V , VGS=10V , RG=3.3 ID=1A --- 1.6 3 ns Tr Rise Time2 , 3 --- 6.6 13 Td(off) Turn-Off Delay Time2 , 3 --- 11.5 22 Tf Fall Time2 , 3 --- 3.6 7 Ciss Input Capacitance VDS=50V , VGS=0V , F=1MHz --- 820 1190 pF Coss Output Capacitance --- 35 55 Crss Reverse Transfer Capacitance --- 20 30 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.3 2.6 Ω Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 2 A ISM Pulsed Source Current --- --- 8 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings |
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