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KFG5616U1A-PIB6 データシート(PDF) 3 Page - Samsung semiconductor |
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KFG5616U1A-PIB6 データシート(HTML) 3 Page - Samsung semiconductor |
3 / 113 page OneNAND256(KFG5616x1A-xxB6) FLASH MEMORY 3 Document Title OneNAND Revision History Revision No. 0.0 1.0 1.1 Remark Preliminary Final Final Draft Date April 17, 2005 May 17, 2005 Aug 12, 2005 History 1. Initial Issue 1. Corrected the errata 2. Added Data Protection flow chart. 3. Removed Cache Read Operation. 4. Added additional information on command register. 5. Revised Interrupt status register information. 6. Added INT pin schematic. 7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us. 8. Revised AC/DC parameters 9. Revised ECC Bypass Description 10. Revised Reset Parameters and Timing Diagrams. 1. Corrected the errata 2. Revised Invalid Block Table Creation Flow Chart. 3. Revised Multi Block Erase Description. 4. Revised Reset Mode Operation. 1.1 Revision History |
同様の部品番号 - KFG5616U1A-PIB6 |
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同様の説明 - KFG5616U1A-PIB6 |
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