データシートサーチシステム
Selected language   Japanese  ▼

Delete All
ON OFF
ALLDATASHEET.JP

X  

Preview PDF Download HTML

1N91X データシート(PDF) 2 Page - ON Semiconductor

部品番号. 1N91X
部品情報  Small Signal Diode
ダウンロード  7 Pages
Scroll/Zoom Zoom In 100% Zoom Out
メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

1N91X Datasheet(HTML) 2 Page - ON Semiconductor

  1N91X データシート HTML 1Page - ON Semiconductor 1N91X データシート HTML 2Page - ON Semiconductor 1N91X データシート HTML 3Page - ON Semiconductor 1N91X データシート HTML 4Page - ON Semiconductor 1N91X データシート HTML 5Page - ON Semiconductor 1N91X データシート HTML 6Page - ON Semiconductor 1N91X データシート HTML 7Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
1N91x, 1N4x48, FDLL914, FDLL4x48
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
Maximum Repetitive Reverse Voltage
VRRM
100
V
Average Rectified Forward Current
IO
200
mA
DC Forward Current
IF
300
mA
Recurrent Peak Forward Current
If
400
mA
Non−repetitive Peak Forward Surge Current
Pulse Width = 1.0 s
IFSM
1.0
A
Pulse Width = 1.0
ms
4.0
A
Storage Temperature Range
TSTG
−65 to +200
°C
Operating Junction Temperature Range
TJ
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
Unit
Power Dissipation
PD
500
mW
Thermal Resistance, Junction−to−Ambient
RqJA
300
°C
ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 2)
Symbol
Parameter
Conditions
Min
Max
Unit
VR
Breakdown Voltage
IR = 100 mA
100
V
IR = 5.0 mA
75
V
VF
Forward Voltage
914B / 4448
IF = 5.0 mA
0.62
0.72
V
916B
IF = 5.0 mA
0.63
0.73
V
914 / 916 / 4148
IF = 10 mA
1.0
V
914A / 916A
IF = 20 mA
1.0
V
916B
IF = 20 mA
1.0
V
914B / 4448
IF = 100 mA
1.0
V
IR
Reverse Leakage
VR = 20 V
0.025
mA
VR = 20 V, TA = 150°C
50
mA
VR = 75 V
5.0
mA
CT
Total Capacitance
916/916A/916B/4448
VR = 0, f = 1.0 MHz
2.0
pF
914/914A/914B/4148
VR = 0, f = 1.0 MHz
4.0
pF
trr
Reverse Recovery Time
IF = 10 mA, VR = 6.0 V (600 mA)
Irr = 1.0 mA, RL = 100 W
4.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Non−recurrent square wave PW = 8.3 ms.


Html ページ

1  2  3  4  5  6  7 


Datasheet Download

Go To PDF Page


リンク URL



Privacy Policy
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   ブックマーク
   |   リンク交換   |   メーカーリスト
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn