データシートサーチシステム |
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RTL030P02 データシート(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
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RTL030P02 データシート(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
4 / 9 page TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 VGS = - 2.5 V; ID =- 4.4 A VGS =- 4.5 V; ID =- 5 A T J - Junction Temperature (°C) 0.02 0.04 0.06 0.08 0.10 123 45 ID =- 5 A TJ =25 °C TJ = 125 °C V GS - Gate-to-Source Voltage (V) 0 0.001 0.01 0.1 1 10 6 12 18 24 30 Time (s) Source-Drain Diode Forward Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area, Junction-to-Ambient 0.1 1 10 100 00.5 1.0 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 0.30 0.45 0.60 0.75 0.90 - 50 - 25 0 25 50 75 100 125 150 ID = - 250 μA T J - Temperature (°C) 100 1 0.1 1 10 100 0.01 10 0.1 TA =25 °C Single Pulse 1s,10s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified E-mail:China@VBsemi TEL:86-755-83251052 E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw RTL030P02 4 |
同様の部品番号 - RTL030P02 |
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同様の説明 - RTL030P02 |
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