RU6H11R datasheet(4/10 Pages) VBSEMI

部品番号	RU6H11R

部品情報	N-Channel 650V (D-S) Power MOSFET

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Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10 - Temperature vs. Drain-to-Source Voltage

Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case

VSD, Source-Drain Voltage (V)

0.1

1

10

100

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

T

J = 150 °C

T

J = 25 °C

V

GS = 0 V

1

10

100

1000

0.01

0.1

1

10

100

1000

VDS- Drain -to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Limited by R

DS(on)*

1 ms

10 ms

100 μs

Operation in this Area

Limited by R

DS(on)

TC = 25 °C

TJ = 150 °C

Single Pulse

BVDSS Limited

I

DM = Limited

TJ, Case Temperature (°C)

5

10

15

20

25

50

75

100

125

150

0

TJ, Junction Temperature (°C)

- 60

0

160

- 40 - 20

20

40

60

80 100 120 140

600

625

650

675

700

725

750

775

800

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

Pulse Time (s)

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

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RU6H11R

4

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