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SI4356DY データシート(PDF) 3 Page - Vishay Siliconix |
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SI4356DY データシート(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Si4356DY Vishay Siliconix New Product Document Number: 71880 S-03662—Rev. B, 14-Apr-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.000 0.002 0.004 0.006 0.008 0.010 0 1020304050 0 1 2 3 4 5 6 0 8 16 24 32 40 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 Crss VDS = 15 V ID = 17 A VGS = 10 V ID = 17 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) VGS = 4.5 V 1.0 1.2 0.000 0.005 0.010 0.015 0.020 0.025 02468 10 1 10 50 ID = 17 A 0.00 0.2 0.4 0.6 0.8 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) 0 1000 2000 3000 4000 5000 0 6 12 18 24 30 Coss Ciss |
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同様の説明 - SI4356DY |
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