SI4356DY datasheet(3/6 Pages) VISHAY

部品番号	SI4356DY

部品情報	N-Channel 30-V MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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Si4356DY

Vishay Siliconix

New Product

Document Number: 71880

S-03662—Rev. B, 14-Apr-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.000

0.002

0.004

0.006

0.008

0.010

0

1020304050

0

1

2

3

4

5

6

0

8

16

24

32

40

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

Crss

VDS = 15 V

ID = 17 A

VGS = 10 V

ID = 17 A

VGS = 10 V

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

VGS = 4.5 V

1.0

1.2

0.000

0.005

0.010

0.015

0.020

0.025

02468

10

1

10

50

ID = 17 A

0.00

0.2

0.4

0.6

0.8

TJ = 25_C

TJ = 150_C

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

0

1000

2000

3000

4000

5000

0

6

12

18

24

30

Coss

Ciss

同様の部品番号 - SI4356DY

メーカー	部品番号	データシート	部品情報
Silicon Laboratories	SI4356	373Kb / 26P	Pin configurable
	Si4356-B1A-FM	70Kb / 1P	This change is considered a minor change which does not affect form, fit, function, quality, or reliability.
	Si4356-B1A-FMR	70Kb / 1P	This change is considered a minor change which does not affect form, fit, function, quality, or reliability.
	SI4356-DK	1Mb / 16P	Receiver node is a switch configurable Si4356 demo board
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET

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同様の説明 - SI4356DY

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