2SC1509 datasheet(1/3 Pages) PANASONIC

部品番号	2SC1509

部品情報	Silicon NPN epitaxial planer type(For low-frequency driver amplification)

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メーカー	PANASONIC [Panasonic Semiconductor]

ホームページ	http://www.panasonic.com/industrial/

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1

Transistor

2SC1509

Silicon NPN epitaxial planer type

For low-frequency driver amplification

Complementary to 2SA777

s Features

q

High collector to emitter voltage VCEO.

q

Optimum for the driver stage of a low-frequency and 25 to 30W

output amplifier.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

3:Base

EIAJ:SC–51

TO–92L Package

5.9

±0.2

2.54

±0.15

0.7

±0.1

4.9

±0.2

0.45

+0.2

–0.1

1.27

0.45

+0.2

–0.1

13

2

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

80

5

1

0.5

1

150

–55 ~ +150

Unit

V

A

W

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

VCBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Conditions

VCB = 20V, IE = 0

IC = 10µA, IE = 0

IC = 100µA, IB = 0

IE = 10µA, IC = 0

VCE = 10V, IC = 150mA

*2

VCE = 5V, IC = 500mA

*2

IC = 300mA, IB = 30mA

*2

IC = 300mA, IB = 30mA

*2

VCB = 10V, IE = –50mA, f = 100MHz

VCB = 10V, IE = 0, f = 1MHz

min

80

5

130

50

typ

100

0.2

0.85

120

11

max

0.1

330

0.4

1.2

20

Unit

µA

V

MHz

pF

*1h

FE1 Rank classification

Rank

R

S

hFE1

130 ~ 220

185 ~ 330

*2 Pulse measurement

同様の部品番号 - 2SC1509

メーカー	部品番号	データシート	部品情報
New Jersey Semi-Conduct...	2SC1509	86Kb / 1P	Silicon NPN epitaxial planer type

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