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TC55VZM216AJJN12 データシート(PDF) 8 Page - Toshiba Semiconductor |
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TC55VZM216AJJN12 データシート(HTML) 8 Page - Toshiba Semiconductor |
8 / 11 page TC55VZM216AJJN/AFTN08,10,12 2003-01-17 8/11 Note: (1) Operating temperature (Ta) is guaranteed for transverse air flow exceeding 400 linear feet per minute. (2) WE remains HIGH for the Read Cycle. (3) If CE goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedance. (4) If CE goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high impedance. (5) If OE is HIGH during the write cycle, the outputs will remain at high impedance. (6) The parameters specified below are measured using the load shown in Fig.1. (A) tCOE, tOEE, tBE, tOEW ・・・・・・・・・・・・ Output Enable Time (B) tCOD, tODO, tBD, tODW・・・・・・・・・・・・ Output Disable Time WE DOUT (A) VALID DATA OUT 0.2 V 0.2 V (B) 0.2 V 0.2 V INDETERMINATE Hi-Z Hi-Z CE , OE UB , LB INDETERMINATE |
同様の部品番号 - TC55VZM216AJJN12 |
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同様の説明 - TC55VZM216AJJN12 |
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