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2SD1119 データシート(PDF) 1 Page - Panasonic Semiconductor |
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2SD1119 データシート(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification s Features q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances at high efficiency with the low-voltage power supply. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5 ±0.1 3.0 ±0.15 1.5 ±0.1 0.4 ±0.08 0.5 ±0.08 1.5 ±0.1 0.4 ±0.04 1.6 ±0.2 45 ° marking 321 Symbol VCBO VCEO VEBO ICP IC PC * Tj Tstg Ratings 40 25 7 5 3 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) fT Cob Conditions VCB = 10V, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 0.5A *2 VCE = 2V, IC = 2A *2 IC = 3A, IB = 0.1A *2 VCB = 6V, IE = –50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min 25 7 230 150 typ 150 max 0.1 600 1 50 Unit µA V V V MHz pF Marking symbol : T *1h FE1 Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 Marking Symbol TQ TR * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *2 Pulse measurement |
同様の部品番号 - 2SD1119 |
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同様の説明 - 2SD1119 |
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