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2SD1474 データシート(PDF) 2 Page - Panasonic Semiconductor

部品番号 2SD1474
部品情報  Silicon NPN epitaxial planar type(For power amplification with high forward current transfer ratio)
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メーカー  PANASONIC [Panasonic Semiconductor]
ホームページ  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1474 データシート(HTML) 2 Page - Panasonic Semiconductor

  2SD1474 Datasheet HTML 1Page - Panasonic Semiconductor 2SD1474 Datasheet HTML 2Page - Panasonic Semiconductor 2SD1474 Datasheet HTML 3Page - Panasonic Semiconductor  
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2
Power Transistors
2SD1474
PC —Ta
IC —VCE
VCE(sat) —IC
VBE(sat) —IC
hFE —IC
fT —IC
Cob —VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1) T
C=Ta
(2) With a 100
× 100 × 2mm
Al heat sink
(3) Without heat sink
(P
C=2.0W)
(1)
(2)
(3)
Ambient temperature Ta (˚C)
012
10
8
26
4
0
6
5
4
3
2
1
I
B=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
TC=25˚C
Collector to emitter voltage V
CE
(V)
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C/IB=50
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C/IB=50
T
C=–25˚C
25˚C
100˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
10
102
103
104
105
V
CE=2V
T
C=100˚C
25˚C
–25˚C
Collector current I
C
(A)
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE=12V
f=10MHz
T
C=25˚C
Collector current I
C
(A)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E=0
f=1MHz
T
C=25˚C
Collector to base voltage V
CB
(V)
08
26
47
15
3
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
w=1ms
Duty cycle=1%
I
C/IB=50 (IB1=–IB2)
V
CC=50V
T
C=25˚C
t
stg
t
f
t
on
Collector current I
C
(A)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C=25˚C
I
CP
I
C
t=10ms
DC
Collector to emitter voltage V
CE
(V)


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