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2SD1499 データシート(PDF) 1 Page - Panasonic Semiconductor

部品番号 2SD1499
部品情報  Silicon NPN triple diffusion planar type(For high power amplification)
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メーカー  PANASONIC [Panasonic Semiconductor]
ホームページ  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD1499 データシート(HTML) 1 Page - Panasonic Semiconductor

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1
Power Transistors
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
s Features
q
Extremely satisfactory linearity of the forward current transfer
ratio hFE
q
Wide area of safe operation (ASO)
q
High transition frequency fT
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Unit
V
V
V
A
A
W
˚C
˚C
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
*
hFE3
VBE
VCE(sat)
fT
Cob
Conditions
VCB = 100V, IE = 0
VEB = 3V, IC = 0
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
IC = 3A, IB = 0.3A
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, f = 1MHz
min
20
60
20
typ
20
90
max
50
50
200
1.8
2.0
Unit
µA
µA
V
V
MHz
pF
*h
FE2 Rank classification
Rank
Q
P
hFE2
60 to 120
100 to 200
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
100
100
5
8
5
40
2
150
–55 to +155
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
φ3.1±0.1


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