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SSM3K43FS データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 SSM3K43FS
部品情報  TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3K43FS データシート(HTML) 1 Page - Toshiba Semiconductor

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SSM3K43FS
2014-03-01
1
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM3K43FS
High-Speed Switching Applications
• 1.5-V drive
• Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5V)
: Ron = 1.14 Ω (max) (@VGS = 1.8V)
: Ron = 0.85 Ω (max) (@VGS = 2.5V)
: Ron = 0.66 Ω (max) (@VGS = 4.5V)
: Ron = 0.63 Ω (max) (@VGS = 5.0V)
Absolute Maximum Ratings (Ta = 25 °C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGSS
± 10
V
DC
ID
500
Drain current
Pulse
IDP
1000
mA
Drain power dissipation
PD (Note1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage
and
the
significant
change
in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm
× 25.4 mm × 1.6 mm, 0.36 mm2 ×3)
Marking
Equivalent Circuit (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2H1B
Weight: 2.4mg (typ.)
N S
1
2
3
1
2
3
Start of commercial production
2009-03


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