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TRS2E65F データシート(PDF) 3 Page - Toshiba Semiconductor |
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TRS2E65F データシート(HTML) 3 Page - Toshiba Semiconductor |
3 / 6 page TRS2E65F 3 7. 7. 7. 7. Marking Marking Marking Marking Fig. Fig. Fig. Fig. 7.1 7.1 7.1 7.1 Marking Marking Marking Marking Note: A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Abbreviation Code S2E65F Part Number TRS2E65F 8. 8. 8. 8. Usage Considerations Usage Considerations Usage Considerations Usage Considerations (1) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. VRRM : VRRM has a temperature coefficient of 0.1 %/. Take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. IF(DC) : We recommend that the worst-case current be no greater than 80 % of the absolute maximum rating of IF(DC). IFP : We recommend that the worst-case current be no greater than 80 % of the absolute maximum rating of IFP. IFSM : This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj : Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 140 . (2) For other design considerations, see the Toshiba Semiconductor website. 2017-09-22 Rev.1.0 ©2016-2017 Toshiba Electronic Devices & Storage Corporation |
同様の部品番号 - TRS2E65F |
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同様の説明 - TRS2E65F |
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