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TRS10A65F データシート(PDF) 1 Page - Toshiba Semiconductor |
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TRS10A65F データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page TRS10A65F 1 SiC Schottky Barrier Diode TRS10A65F TRS10A65F TRS10A65F TRS10A65F Start of commercial production 2016-11 1. 1. 1. 1. Applications Applications Applications Applications • Power Factor Correction • Solar Inverters • Uninterruptible Power Supplies • DC-DC Converters 2. 2. 2. 2. Features Features Features Features (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 79A (Max) (3) The junction capacitance is small : Cj = 36 pF (Typ.) (4) The reverse current is small. : IR = 0.5 µA (Typ.) (5) Isolation package: TO-220F-2L 3. 3. 3. 3. Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit Packaging and Internal Circuit TO-220F-2L 1: Cathode 2: Anode 2020-09-28 Rev.6.0 ©2016-2020 Toshiba Electronic Devices & Storage Corporation |
同様の部品番号 - TRS10A65F |
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同様の説明 - TRS10A65F |
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