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STN4920 データシート(PDF) 1 Page - VBsemi Electronics Co.,Ltd

部品番号 STN4920
部品情報  Dual N-Channel 30 V (D-S) MOSFET
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メーカー  VBSEMI [VBsemi Electronics Co.,Ltd]
ホームページ  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STN4920 データシート(HTML) 1 Page - VBsemi Electronics Co.,Ltd

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Dual N-Channel 30 V (D-S) MOSFET
FEATURES
TrenchFETPower MOSFET
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Notebook System Power
Low Current DC/DC
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)
a
Qg (Typ.)
30
0.016 at VGS = 10 V
8.5
7.1
0.020 at VGS = 4.5 V
7.6
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
N-Channel MOSFET
G1
D1
S1
N-Channel MOSFET
G2
D2
S2
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
8.5
A
TC = 70 °C
7.5
TA = 25 °C
7.2b, c
TA = 70 °C
5.9b, c
Pulsed Drain Current
IDM
30
Source-Drain Current Diode Current
TC = 25 °C
IS
2.8
TA = 25 °C
1.8b, c
Pulsed Source-Drain Current
ISM
30
Single Pulse Avalanche Current
L = 0.1 mH
IAS
10
Single Pulse Avalanche Energy
EAS
5
Maximum Power Dissipation
TC = 25 °C
PD
3.1
W
TC = 70 °C
2.0
TA = 25 °C
2.0b, c
TA = 70 °C
1.25b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambientb, d
t
 10 s
RthJA
52
62.5
°C/W
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
30
40
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
STN4920
1


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