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STN4920 データシート(PDF) 2 Page - VBsemi Electronics Co.,Ltd

部品番号 STN4920
部品情報  Dual N-Channel 30 V (D-S) MOSFET
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メーカー  VBSEMI [VBsemi Electronics Co.,Ltd]
ホームページ  www.VBsemi.cn
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STN4920 データシート(HTML) 2 Page - VBsemi Electronics Co.,Ltd

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Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
V
DS/TJ
ID = 250 µA
3.0
mV/°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
ID = 250 µA
- 5.2
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID= 250 µA
1.2
2.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
1
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C
10
On -State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
20
A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V, ID = 8 A
0.016
VGS = 4.5 V, ID = 5 A
0.020
Forward Transconductanceb
gfs
VDS = 15 V, ID = 8 A
27
S
Dynamica
Input Capacitance
Ciss
VDS = 15 V, VGS = 0 V, ID = 1 MHz
660
pF
Output Capacitance
Coss
140
Reverse Transfer Capacitance
Crss
86
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 8 A
14.5
22
nC
VDS = 15 V, VGS = 4.5 V, ID = 8 A
7.1
11
Gate-Source Charge
Qgs
1.9
Gate-Drain Charge
Qgd
2.7
Gate Resistance
Rg
f = 1 MHz
0.5
2.6
5.2
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 3 
ID  5 A, VGEN = 4.5 V, Rg = 1 
14
28
ns
Rise Time
tr
45
80
Turn-Off Delay Time
td(off)
18
35
Fall Time
tf
12
24
Turn-On Delay Time
td(on)
VDD = 15 V, RL = 3 
ID  5 A, VGEN = 10 V, Rg = 1 
714
Rise Time
tr
10
20
Turn-Off Delay Time
td(off)
15
30
Fall Time
tf
714
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
2.8
A
Pulse Diode Forward Currenta
ISM
30
Body Diode Voltage
VSD
IS = 2 A
0.77
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
17
34
ns
Body Diode Reverse Recovery Charge
Qrr
918
nC
Reverse Recovery Fall Time
ta
10
nS
Reverse Recovery Rise Time
tb
7
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
STN4920
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