データシートサーチシステム |
|
STP3NK50Z データシート(PDF) 4 Page - VBsemi Electronics Co.,Ltd |
|
STP3NK50Z データシート(HTML) 4 Page - VBsemi Electronics Co.,Ltd |
4 / 9 page Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 0 400 800 1200 1600 2000 1 10 100 1000 DS V , Drain-to-Source Voltage (V) A V = 0V, f = 1MHz C = C + C , C SHORTED C = C C = C + C GS iss gs gd ds rss gd oss ds gd iss oss rss 0 10 20 30 40 50 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 3.2 A V = 130V DS V = 325V DS V = 520V DS 0.1 1 5 10 0.2 0.4 0.6 0.8 1.0 1.2 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° 0.1 1 5 10 10 100 1000 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms E-mail:China@VBsemi TEL:86-755-83251052 www.VBsemi.tw STP3NK50Z 4 |
同様の部品番号 - STP3NK50Z |
|
同様の説明 - STP3NK50Z |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |