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VKI50-06P1 データシート(PDF) 4 Page - IXYS Corporation

部品番号 VKI50-06P1
部品情報  IGBT Modules - Short Circuit SOA Capability Square RBSOA
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メーカー  IXYS [IXYS Corporation]
ホームページ  http://www.ixys.com
Logo IXYS - IXYS Corporation

VKI50-06P1 データシート(HTML) 4 Page - IXYS Corporation

  VKI50-06P1 Datasheet HTML 1Page - IXYS Corporation VKI50-06P1 Datasheet HTML 2Page - IXYS Corporation VKI50-06P1 Datasheet HTML 3Page - IXYS Corporation VKI50-06P1 Datasheet HTML 4Page - IXYS Corporation  
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© 2002 IXYS All rights reserved
4 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VKI 50-06P1
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
020
40
60
0
2
4
6
8
0
20
40
60
80
0
204060
0,0
0,5
1,0
1,5
2,0
0
100
200
300
400
0,00001 0,0001 0,001
0,01
0,1
1
10
0,0001
0,001
0,01
0,1
1
10
0
1020304050607080
0,0
0,5
1,0
1,5
2,0
0
100
200
300
400
0
102030
4050607080
0
1
2
3
4
20
40
60
80
single pulse
V
CE = 300V
V
GE = ±15V
R
G
= 33
T
VJ
= 125°C
VDI...50-06P1
V
CE = 300V
V
GE = ±15V
I
C
= 30A
T
VJ
= 125°C
0
100
200
300
400
500
600
700
0
20
40
60
80
R
G = 33 Ω
T
VJ = 125°C
V
CE = 300V
V
GE = ±15V
R
G
= 33
T
VJ
= 125°C
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
V
A
mJ
ns
ns
mJ
25T60
25T60
25T60
25T60
25T60
V
CE = 300 V
V
GE = ±15 V
I
C
= 30 A
T
VJ
= 125°C
diode


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