SI7686DP datasheet(1/7 Pages) VISHAY

部品番号	SI7686DP

部品情報	N-Channel 30-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr Package

with Low 1.07mm Profile

D Optimized for High-Side Synchronous Rectifier

Operation

D 100% Rg Tested

APPLICATIONS

D DC/DC Converters

RoHS

COMPLIANT

Si7686DP

Vishay Siliconix

New Product

Document Number: 73451

S–51334—Rev. A, 25-Jul-05

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)a

Qg (Typ)

30

0.0095 @ VGS = 10 V

35

92 nC

30

0.014 @ VGS = 4.5 V

35

9.2 nC

Ordering Information: Si7686DP-T1—E3 (Lead (Pb)-Free)

N-Channel MOSFET

G

D

S

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK SO-8

Bottom View

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

TC = 25_C

35a

Continuous Drain Current (TJ = 150_C)

TC = 70_C

ID

35a

Continuous Drain Current (TJ = 150_C)

TA = 25_C

ID

17.9b, c

TA = 70_C

14.3b, c

A

Pulsed Drain Current

IDM

50

Continuous Source Drain Diode Current

TC = 25_C

IS

31.5

Continuous Source-Drain Diode Current

TA = 25_C

IS

4.2b, c

TC = 25_C

37.9

Maximum Power Dissipation

TC = 70_C

PD

24.2

W

Maximum Power Dissipation

TA = 25_C

PD

5b, c

W

TA = 70_C

3.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

Soldering Recommendations (Peak Temperature)d, e

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

p 10 sec

RthJA

21

25

_C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.8

3.3

_C/W

Notes:

a.

Package Limited.

b.

Surface mounted on 1” x 1” FR4 board.

c.

t = 10 sec

d.

See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

e.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f.

Maximum under steady state conditions is 70

_C/W.

同様の部品番号 - SI7686DP

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI7686DP	302Kb / 13P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022
	SI7686DP-T1-E3	150Kb / 9P	N-Channel 30-V (D-S) MOSFET Rev. C, 03-Mar-08
	SI7686DP	302Kb / 13P	N-Channel 30-V (D-S) MOSFET 01-Jan-2022

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