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SI7686DP データシート(PDF) 3 Page - Vishay Siliconix |
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SI7686DP データシート(HTML) 3 Page - Vishay Siliconix |
3 / 7 page Si7686DP Vishay Siliconix New Product Document Number: 73451 S–51334—Rev. A, 25-Jul-05 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0040 0.0060 0.0080 0.0100 0.0120 0.0140 0 1020304050 0 2 4 6 8 10 0 4 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 –25 0 25 50 75 100 125 150 0 300 600 900 1200 1500 0 5 10 15 20 25 30 Crss Coss Ciss ID = 13.8 A VGS = 10 V VGS = 10 V Gate Charge On-Resistance vs. Drain Current and Gate Voltage Qg – Total Gate Charge (nC) VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) VGS = 4.5 V 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 0.0 0.4 0.8 1.2 1.6 2.0 VGS = 10 thru 4 V 25 _C TC = 125_C –55 _C Output Characteristics Transfer Characteristics VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) VGS = 4.5 V VDS = 21 V VDS = 15 V ID = 13.8 A 3 V |
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