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MMDT3904 データシート(PDF) 1 Page - Rectron Semiconductor

部品番号 MMDT3904
部品情報  DUAL TRANSISTOR (NPNNPN)
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メーカー  RECTRON [Rectron Semiconductor]
ホームページ  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

MMDT3904 データシート(HTML) 1 Page - Rectron Semiconductor

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MMDT3904
FEATURES
Epitaxial planar die construction
Ideal for low power amplification and switching
MARKING:K6N
MAXIMUM RATINGS (Ta=25
℃ unless otherwise noted)
Symbol
Parameter
Value
Units
Collector-Base Voltage
60
V
Collector-Emitter Voltage
40
V
Emitter-Base Voltage
5
V
Collector Current -Continuous
0.2
A
Collector Power Dissipation
0.2
W
Junction Temperature
150
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25
℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.05
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.05
μA
hFE(1)
VCE=1V,IC=0.1mA
40
hFE(2)
VCE=1V,IC=1mA
70
hFE(3)
VCE=1V,IC=10mA
100
300
hFE(4)
VCE=1V,IC=50mA
60
DC current gain
hFE(5)
VCE=1V,IC=100mA
30
VCE(sat)1
IC=10mA,IB=1mA
0.2
V
Collector-emitter saturation voltage
VCE(sat)2
IC=50mA,IB=5mA
0.3
V
VBE(sat)1
IC=10mA,IB=1mA
0.65
0.85
V
Base-emitter saturation voltage
VBE(sat)2
IC=50mA,IB=5mA
0.95
V
Transition frequency
fT
VCE=20V,IC=10mA,f=100MHz
300
MHz
Collector output capacitance
Cob
VCB=5V,IE=0,f=1MHz
4
pF
Noise figure
NF
VCE=5V,Ic=0.1mA,f=1kHz,RS=1KΩ
5
dB
Delay time
td
35
nS
Rise time
tr
VCC=3V, VBE(off)=-0.5V
IC=10mA , IB1=-IB2= 1mA
35
nS
Storage time
ts
200
nS
Fall time
tf
VCC=3V, IC=10mA
IB1=-IB2=1mA
50
nS
Collector cut-off current
ICEX
VCE=30V,VBE(off)=3V
0.05
μA
SOT-363
DUAL TRANSISTOR (NPN+NPN)
SOT-363 Plastic-Encapsulate Transistors
MMDT3904
2016-03
REV: O2


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