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2N1724 データシート(PDF) 1 Page - Microsemi Corporation |
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2N1724 データシート(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA NPN SILICON HIGH POWER TRANSISTOR Qualified per MIL-PRF-19500/262 Devices Qualified Level 2N1722 2N1724 JAN JANTX MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 175 Vdc Emitter-Base Voltage VEBO 10 Vdc Collector Current IC 5.0 Adc Total Power Dissipation @ TA = +25 0C(1) @ TC = +100 0C (2) PT 3.0 50 W W Temperature Range: Operating Storage Junction TOP, Tstg 175 -65 to +200 0C 1) Derate linearly 20 mW/ 0C for TA between +250C and +1750C 2) Derate linearly 666 mW/ 0C for TC between +1000C and +1750C TO-61* 2N1724 TO-53* 2N1722 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc V(BR)CEO 80 Vdc Emitter-Base Breakdown Voltage IE = 10 mAdc V(BR)EBO 10 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc ICES 300 µAdc Collector-Base Cutoff Current VCB = 175 Vdc ICBO 5.0 mAdc Emitter-Base Cutoff Current VEB = 7.0 Vdc IEBO 400 µAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 |
同様の部品番号 - 2N1724 |
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同様の説明 - 2N1724 |
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