1

Silicon Junction FETs (Small Signal)

unit: mm

2SK123

Silicon N-Channel Junction FET

For impedance conversion in low frequency

For electret capacitor microphone

s Features

q High mutual conductance g

m

q Low noise voltage of NV

1: Drain

2: Source

3: Gate

Mini Flat Package (3-pin)

Parameter

Drain to Source voltage

Drain to Gate voltage

Drain to Source current

Drain to Gate current

Gate to Source current

Allowable power dissipation

Operating ambient temperature

Storage temperature

Symbol

Ratings

20

20

2

2

2

200

−20 to +80

−55 to +150

Unit

V

V

mA

mA

mA

mW

°C

°C

Parameter

Current consumption

Drain to Source cut-off current

Mutual conductance

Noise figure

Voltage gain

Voltage gain difference

Symbol

NV

∆|G

∆|G

Conditions

min

100

95

0.7

−3

0

−4.5

0

0

max

600

480

4

+3.5

+3.5

Unit

µA

µA

mS

µV

dB

dB

dB

dB

dB

typ

1.6

2

3.3

− 0.3

2.4

±0.1

1.9

±0.1

1.5

+0.25

−0.05

5.8

+0.2

−0.3

1

2

3

Marking Symbol: 1H

Note: For the forming type, (Y) is indicated after the part No.