2SK3033 datasheet(1/1 Pages) PANASONIC

部品番号	2SK3033

部品情報	Silicon N-Channel Power F-MOS FET

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メーカー	PANASONIC [Panasonic Semiconductor]

ホームページ	http://www.panasonic.com/industrial/

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Power F-MOS FETs

unit: mm

2SK3033 (Tentative)

Silicon N-Channel Power F-MOS FET

s Features

q Avalanche energy capacity guaranteed

q High-speed switching

q Low ON-resistance

q No secondary breakdown

q Low-voltage drive

q High electrostatic breakdown voltage

s Applications

q Contactless relay

q Diving circuit for a solenoid

q Driving circuit for a motor

q Control equipment

q Switching power supply

s Electrical Characteristics (T

C = 25°C)

Parameter

Drain to Source cut-off current

Gate to Source leakage current

Drain to Source breakdown voltage

Gate threshold voltage

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

Input capacitance (Common Source)

Output capacitance (Common Source)

Reverse transfer capacitance (Common Source)

Turn-on time (delay time)

Rise time

Fall time

Turn-off time (delay time)

Thermal resistance between channel and case

Thermal resistance between channel and atmosphere

Symbol

IDSS

IGSS

VDSS

Vth

RDS(on)1

RDS(on)2

| Yfs |

VDSF

Ciss

Coss

Crss

td(on)

tr

tf

td(off)

Rth(ch-c)

Rth(ch-a)

Conditions

VDS = 80V, VGS = 0

VGS = ±20V, VDS = 0

ID = 1mA, VGS = 0

VDS = 10V, ID = 1mA

VGS = 10V, ID = 20A

VGS = 4V, ID = 20A

VDS = 10V, ID = 20A

IDR = 20A, VGS = 0

VDS = 10V, VGS = 0, f = 1MHz

VDD = 30V, ID = 20A

VGS = 10V, RL = 1.5Ω

min

100

1

13

typ

35

40

26

2400

530

220

12

20

120

600

max

10

±10

2.5

60

75

−1.4

2.08

62.5

Unit

µA

V

m

Ω

m

Ω

S

V

pF

ns

°C/W

s Absolute Maximum Ratings (T

C = 25°C)

Parameter

Drain to Source breakdown voltage

Gate to Source voltage

Drain current

Avalanche energy capacity

Allowable power

dissipation

Channel temperature

Storage temperature

DC

Pulse

TC = 25°C

Ta = 25°C

Symbol

VDSS

VGSS

ID

IDP

EAS*

PD

Tch

Tstg

Ratings

100

±20

±40

±80

80

60

2

150

−55 to +150

Unit

V

A

mJ

W

°C

*

L = 0.1mH, IL = 40A, 1 pulse

Internal Connection

1: Gate

2: Drain

3: Source

TO-220E Package

9.9±0.3

23

1

4.6±0.2

2.9±0.2

2.6±0.1

2.54±0.2

0.75±0.1

1.2±0.15

5.08±0.4

φ3.2±0.1

1.45±0.15

0.7±0.1

7

G

D

S

同様の部品番号 - 2SK3033

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	2SK3033	323Kb / 2P	isc N-Channel MOSFET Transistor

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