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STP21NM60N データシート(PDF) 3 Page - STMicroelectronics |
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3 / 16 page 3/16 STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off (2) Characteristic value at turn off on inductive load Table 7: Dynamic (*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 8: Source Drain Diode Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Symbol Parameter Test Conditions Value Unit Min. Typ. Max. V(BR)DSS Drain-source Breakdown Voltage ID = 1mA, VGS = 0 600 V dv/dt(2) Drain Source Voltage Slope Vdd=480V, Id=17A, Vgs=10V 48 V/ns IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V 100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 8.5 A 0.190 0.24 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS = 15 V, ID = 8 A 12 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1950 508 38.4 pF pF pF Coss eq. (*) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 400V 282 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Off-voltageRise Time Fall Time VDD =300 V, ID = 8.5 A RG = 4.7Ω VGS = 10 V (see Figure 20) 22 15 84 31 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 480V, ID = 17 A, VGS = 10V, (see Figure 23) 66.6 9.9 33 nC nC nC Rg Gate Input Resistance f=1MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain 2 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM Source-drain Current Source-drain Current (pulsed) 16 64 A A VSD (1) Forward On Voltage ISD = 17 A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17 A, di/dt = 100 A/µs VDD = 100 V, Tj = 25°C (see Figure 21) 372 4.6 25 ns µC A trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 17A, di/dt = 100 A/µs VDD = 100 V, Tj = 150°C (see Figure 21) 486 6.3 26 ns µC A |
同様の部品番号 - STP21NM60N |
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同様の説明 - STP21NM60N |
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