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STP21NM60N データシート(PDF) 3 Page - STMicroelectronics

部品番号 STP21NM60N
部品情報  N-CHANNEL 600V - 0.19 Ohm - 17 A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP21NM60N データシート(HTML) 3 Page - STMicroelectronics

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STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
(2) Characteristic value at turn off on inductive load
Table 7: Dynamic
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Table 8: Source Drain Diode
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Symbol
Parameter
Test Conditions
Value
Unit
Min.
Typ.
Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
600
V
dv/dt(2)
Drain Source Voltage
Slope
Vdd=480V, Id=17A, Vgs=10V
48
V/ns
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 8.5 A
0.190
0.24
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS = 15 V, ID = 8 A
12
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1950
508
38.4
pF
pF
pF
Coss eq. (*)
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
282
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Off-voltageRise Time
Fall Time
VDD =300 V, ID = 8.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 20)
22
15
84
31
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 17 A,
VGS = 10V,
(see Figure 23)
66.6
9.9
33
nC
nC
nC
Rg
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
2
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
16
64
A
A
VSD (1)
Forward On Voltage
ISD = 17 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 17 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25°C
(see Figure 21)
372
4.6
25
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 17A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 21)
486
6.3
26
ns
µC
A


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