データシートサーチシステム |
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SM8J48 データシート(PDF) 1 Page - Toshiba Semiconductor |
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SM8J48 データシート(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SM8(G,J)48,USM8(G,J)48,SM8(G,J)48A,USM8(G,J)48A 2001-07-10 1 TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8G48,USM8G48,SM8J48,USM8J48 SM8G48A,USM8G48A,SM8J48A,USM8J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current : IT (RMS) = 8A l Gate Trigger Current : IGT = 30mA Max. : IGT = 20mA Max. (“A”Type) Unit: mm SM8G48, SM8J48, SM8G48A, SM8J48A USM8G48, USM8J48, USM8G48A, USM8J48A JEDEC ― JEDEC ― JEITA ― JEITA ― TOSHIBA 13-10J1A TOSHIBA 13-10J2A Weight: 1.7g MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT (U)SM8G48 (U)SM8G48A 400 Repetitive Peak Off-State Voltage (U)SM8J48 (U)SM8J48A VDRM 600 V R.M.S On−State Current IT (RMS) 8 A 80 (50Hz) Peak One Cycle Surge On−State Current (Non-Repetitive) ITSM 88 (60Hz) A I 2 t Limit Value I 2 t 32 A 2 s Critical Rate of Rise of On−State Current (Note 1) di / dt 50 A / µs Peak Gate Power Dissipation PGM 5 W Average Gate Power Dissipation PG (AV) 0.5 W Peak Forward Gate Voltage VGM 10 V Peak Forward Gate Current IGM 2 A Junction Temperature Tj −40~125 °C Storage Temperature Range Tstg −40~125 °C Note 1: VDRM = 0.5×Rated ITM ≤ 12A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 |
同様の部品番号 - SM8J48 |
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同様の説明 - SM8J48 |
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