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データシートサーチシステム |
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データシートサーチシステム |
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IRFZ34NL データシート(PDF) 1 Page - International Rectifier |
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IRFZ34NL Datasheet(HTML) 1 Page - International Rectifier |
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IRFZ34NS/L HEXFET® Power MOSFET PD - 9.1311A l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ34NL) is available for low- profile applications. Description VDSS = 55V RDS(on) = 0.040Ω ID = 29A 2 D P a k T O - 262 S D G 8/25/97 Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case –––– 2.2 RθJA Junction-to-Ambient (PCB mount) ** –––– 40 °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
29 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 20 A IDM Pulsed Drain Current
100 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 68 W Linear Derating Factor 0.45 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy
130 mJ IAR Avalanche Current 16 A EAR Repetitive Avalanche Energy 5.6 mJ dv/dt Peak Diode Recovery dv/dt
5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C |
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