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FDS6673BZ データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDS6673BZ データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page FDS6673BZ Rev. B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250µA, referenced to 25°C -20 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS = 0V -1 µA IGSS Gate to Source Leakage Current VGS = ±25V, VDS = 0V ±10 µA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1 -1.9 -3 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250µA, referenced to 25°C 8.1 mV/°C rDS(on) Drain to Source On Resistance VGS = -10V , ID = -14.5A 6.5 7.8 m Ω VGS = -4.5V, ID = -12A 9.6 12 VGS = -10V, ID = -14.5A TJ = 125oC 9.7 12 gFS Forward Transconductance VDS = -5V, ID = -14.5A 60 S (Note 2) Dynamic Characteristics Ciss Input Capacitance VDS = -15V, VGS = 0V, f = 1.0MHz 3500 4700 pF Coss Output Capacitance 600 800 pF Crss Reverse Transfer Capacitance 600 900 pF Switching Characteristics td(on) Turn-On Delay Time VDD = -15V, ID = -1A VGS = -10V, RGS = 6Ω 14 26 ns tr Rise Time 16 29 ns td(off) Turn-Off Delay Time 225 36 ns tf Fall Time 105 167 ns Qg Total Gate Charge VDS = -15V, VGS = -10V, ID = -14.5A 88 124 nC Qg Total Gate Charge VDS = -15V, VGS = -5V, ID = -14.5A 46 65 nC Qgs Gate to Source Gate Charge 8 nC Qgd Gate to Drain Charge 23.5 nC (Note 2) Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -0.7 -1.2 V trr Reverse Recovery Time IF = 14.5A, di/dt = 100A/µs 45 ns Qrr Reverse Recovery Charge IF = 14.5A, di/dt = 100A/µs 34 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. a) 50 oC/W (10 sec) when mounted on a 1 in2 pad of 2 oz copper b) 105 oC/W when mounted on a .04 in2 pad of 2 oz copper c) 125 oC/W when mounted on a minimun pad |
同様の部品番号 - FDS6673BZ |
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同様の説明 - FDS6673BZ |
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