FDS6673BZ datasheet(2/6 Pages) FAIRCHILD

部品番号	FDS6673BZ

部品情報	P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8m Ohm

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メーカー	FAIRCHILD [Fairchild Semiconductor]

ホームページ	http://www.fairchildsemi.com

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2 / 6 page

FDS6673BZ Rev. B

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2

Electrical Characteristics T

J = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = -250µA, VGS = 0V

-30

V

∆BVDSS

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = -250µA, referenced to

25°C

-20

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = -24V, VGS = 0V

-1

µA

IGSS

Gate to Source Leakage Current

VGS = ±25V, VDS = 0V

±10

µA

On Characteristics

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = -250µA

-1

-1.9

-3

V

∆VGS(th)

∆TJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = -250µA, referenced to

25°C

8.1

mV/°C

rDS(on)

Drain to Source On Resistance

VGS = -10V , ID = -14.5A

6.5

7.8

m

Ω

VGS = -4.5V, ID = -12A

9.6

12

VGS = -10V, ID = -14.5A

TJ = 125oC

9.7

12

gFS

Forward Transconductance

VDS = -5V, ID = -14.5A

60

S

(Note 2)

Dynamic Characteristics

Ciss

Input Capacitance

VDS = -15V, VGS = 0V,

f = 1.0MHz

3500

4700

pF

Coss

Output Capacitance

600

800

pF

Crss

Reverse Transfer Capacitance

600

900

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = -15V, ID = -1A

VGS = -10V, RGS = 6Ω

14

26

ns

tr

Rise Time

16

29

ns

td(off)

Turn-Off Delay Time

225

36

ns

tf

Fall Time

105

167

ns

Qg

Total Gate Charge

VDS = -15V, VGS = -10V,

ID = -14.5A

88

124

nC

Qg

Total Gate Charge

VDS = -15V, VGS = -5V,

ID = -14.5A

46

65

nC

Qgs

Gate to Source Gate Charge

8

nC

Qgd

Gate to Drain Charge

23.5

nC

(Note 2)

Drain-Source Diode Characteristics

VSD

Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A

-0.7

-1.2

V

trr

Reverse Recovery Time

IF = 14.5A, di/dt = 100A/µs

45

ns

Qrr

Reverse Recovery Charge

IF = 14.5A, di/dt = 100A/µs

34

nC

Notes:

1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width < 300

µs, Duty Cycle < 2.0%.

3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

a) 50 oC/W (10 sec)

when mounted on a 1 in2

pad of 2 oz copper

b) 105 oC/W when mounted

on a .04 in2 pad of 2 oz

copper

c) 125 oC/W when mounted

on a minimun pad

同様の部品番号 - FDS6673BZ

メーカー	部品番号	データシート	部品情報
ON Semiconductor	FDS6673BZ-F085	510Kb / 6P	P-Channel PowerTrench짰 MOSFET -30V, -14.5A, 7.8m廓 September-2017, Rev. 2
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同様の説明 - FDS6673BZ

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