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TPCS8006 データシート(PDF) 1 Page - Toshiba Semiconductor

部品番号 TPCS8006
部品情報  High-Speed Switching Applications
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCS8006 データシート(HTML) 1 Page - Toshiba Semiconductor

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TPCS8006
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
TPCS8006
High-Speed Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
• Low drain-source ON resistance: RDS (ON) = 0.8 Ω (typ.)
• High forward transfer admittance: |Yfs| = 1.6 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 250 V)
• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
250
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
250
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
1.1
Drain current
Pulse (Note 1)
IDP
4.4
A
Drain power dissipation (t = 10 s)
(Note 2a)
PD
1.5
Drain power dissipation (t = 10 s)
(Note 2b)
PD
0.6
W
Single pulse avalanche energy(Note3)
EAS
0.07
mJ
Avalanche current
IAR
1.1
A
Repetitive avalanche energy
(Note2a, Note 4)
EAR
0.15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note 1, Note 2, Note 3 and Note 4: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1.2.3.
Gate
4
Source
5.6.7.8 Drain
JEDEC
JEITA
TOSHIBA
2-3R1F
Weight: 0.035 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4


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