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MA2Q739 データシート(PDF) 1 Page - Panasonic Semiconductor

部品番号 MA2Q739
部品情報  Silicon epitaxial planar type
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メーカー  PANASONIC [Panasonic Semiconductor]
ホームページ  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

MA2Q739 データシート(HTML) 1 Page - Panasonic Semiconductor

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1
Schottky Barrier Diodes (SBD)
MA2Q739
Silicon epitaxial planar type
For high-frequency rectification
I Features
• Forward current (average) I
F(AV): 0.7 A type
• Reverse voltage (DC value) V
R: 90 V
• Allowing automatic insertion with the emboss taping
I Absolute Maximum Ratings T
a = 25°C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
VR
90
V
Repetitive peak reverse voltage
VRRM
90
V
Average forward current*
1
IF(AV)
0.7
A
Non-repetitive peak forward
IFSM
10
A
surge current*
2
Junction temperature
Tj
−40 to +125
°C
Storage temperature
Tstg
−40 to +125
°C
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Note) *1 : With a printed-circuit board
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Marking Symbol: PE
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 90 V
1
mA
Forward voltage (DC)
VF
IF = 0.7 A
0.8
V
Terminal capacitance
Ct
VR = 10 V, f = 1 MHz
50
pF
Reverse recovery time*
trr
IF = IR = 100 mA
100
ns
Irr = 10 mA, RL = 100 Ω
I Electrical Characteristics T
a
= 25°C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 10 MHz
3. * : trr measuring instrument
4.4
± 0.3
0 to 0.05
21
5.0
+ 0.4
− 0.1
1.2
± 0.4
1.2
± 0.4
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s = 50 Ω
W.F.Analyzer
(SAS-8130)
R
i = 50 Ω
t
p = 2 µs
t
r = 0.35 ns
δ = 0.05
I
F = 100 mA
I
R = 100 mA
R
L = 100 Ω
10%
Input Pulse
Output Pulse
I
rr = 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A


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