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MBT3904L データシート(PDF) 2 Page - AiT Semiconductor Inc.

部品番号 MBT3904L
部品情報  SWITCHING TRANSISTOR NPN TRANSISTOR
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メーカー  AITSEMI [AiT Semiconductor Inc.]
ホームページ  https://ait-ic.com/
Logo AITSEMI - AiT Semiconductor Inc.

MBT3904L データシート(HTML) 2 Page - AiT Semiconductor Inc.

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AiT Semiconductor Inc.
www.ait-ic.com
MBT3904L
SWITCHING TRANSISTOR
NPN TRANSISTOR
REV1.2
- MAY 2011 RELEASED, JUN 2018 UPDATED -
- 2 -
ABSOLUTE MAXIMUM RATINGS
Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at
these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL CHARACTERISTICS
NOTE1: FR-5 = 1.0 x 0.75 x 0.062 in.
NOTE2: Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
VCEO, Collector-Emitter Voltage
40Vdc
VCBO, Collector-Base Voltage
60Vdc
VEBO, Emitter-Base Voltage
6.0Vdc
IC, Collector Current-Continuous
200mAdc
Parameter
Symbol
Max
Unit
Total Device Dissipation FR-5 Board NOTE1
TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient
RθJA
556
°C/W
Total Device Dissipation Alumina Substrate NOTE2
TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
Junction and Storage Temperature
TJ , Tstg
-55 to +150
°C


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