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TPC6105 データシート(PDF) 2 Page - Toshiba Semiconductor |
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TPC6105 データシート(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TPC6105 2004-07-01 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-off current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 8 V −12 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −200 µA −0.5 ⎯ −1.2 V RDS (ON) VGS = −1.8 V, ID = −0.7 A ⎯ 215 300 RDS (ON) VGS = −2.5 V, ID = −1.4 A ⎯ 110 160 Drain-source ON resistance RDS (ON) VGS = −4.5 V, ID = −1.4 A ⎯ 72 110 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −1.4 A 2.4 4.7 ⎯ S Input capacitance Ciss ⎯ 470 ⎯ Reverse transfer capacitance Crss ⎯ 70 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 80 ⎯ pF Rise time tr ⎯ 5 ⎯ Turn-on time ton ⎯ 9 ⎯ Fall time tf ⎯ 8 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 µs ⎯ 26 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 6 ⎯ Gate-source charge Qgs ⎯ 4 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− −16 V, VGS = −5 V, ID = −2.7 A ⎯ 2 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP — — — −10.8 A Forward voltage (diode) VDSF IDR = −2.7 A, VGS = 0 V — — 1.2 V VDD ∼− −10 V −5 V VGS 0 V ID = −1.4 A VOUT |
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