データシートサーチシステム |
|
SI4356ADY データシート(PDF) 2 Page - Vaishali Semiconductor |
|
SI4356ADY データシート(HTML) 2 Page - Vaishali Semiconductor |
2 / 3 page Vishay Siliconix SPICE Device Model Si4356ADY SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 0.95 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 1008 A VGS = 10 V, ID = 20 A 0.0046 0.0046 Drain-Source On-State Resistance a rDS(on) VGS = 4.5 V, ID = 15 A 0.0056 0.0056 Ω Forward Transconductance a gfs VDS = 15 V, ID = 20 A 62 80 S Diode Forward Voltage a VSD IS = 2.7 A 0.73 0.72 V Dynamic b Input Capacitance Ciss 4358 3780 Output Capacitance Coss 533 555 Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 236 250 pF VDS = 15 V, VGS = 10 V, ID = 20 A 63 69 Total Gate Charge Qg 31 30 Gate-Source Charge Qgs 7.5 7.5 Gate-Drain Charge Qgd VDS = 15 V, VGS = 4.5 V, ID = 20 A 6.5 6.5 nC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 74120 S-51945 ⎯Rev. A, 03-Oct-05 |
同様の部品番号 - SI4356ADY |
|
同様の説明 - SI4356ADY |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |