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SI8435DB データシート(PDF) 2 Page - Vaishali Semiconductor |
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SI8435DB データシート(HTML) 2 Page - Vaishali Semiconductor |
2 / 3 page 2 Vishay Siliconix SPICE Device Model Si8435DB www.vishay.com Document Number: 74145 S-52479 Rev. A, 12-Dec-05 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 0.80 V On-State Drain Current a ID(on) VDS ≤ −5 V, VGS = −4.5 V 60 A VGS = −4.5 V, ID = −3.3 A 0.063 0.060 VGS = −2.5 V, ID = −2.8 A 0.082 0.083 Drain-Source On-State Resistance a rDS(on) VGS = −1.8 V, ID = −0.76 A 0.107 0.108 Ω Forward Transconductance a gfs VDS = −10 V, ID = −3.3 A 11 9 S Diode Forward Voltage a VSD IS = −1 A, VGS = 0 V −0.78 −0.80 V Dynamic b Total Gate Charge Qg 5 5.5 Gate-Source Charge Qgs 0.75 0.75 Gate-Drain Charge Qgd VDS = −10 V, VGS = −4.5 V, ID = −4.6 A 1.5 1.5 nC Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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同様の説明 - SI8435DB |
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