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TA33-5K2F25KD データシート(Datasheet) 1 Page - Vishay Siliconix

部品番号. TA33-5K2F25KD
部品情報  Dual Value, Chip Resistor Center Tap
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
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Document Number: 60066
Revision 24-Feb-06
www.vishay.com
150
TA 33
Vishay Sfernice
VISHAY THIN FILM • FRANCE +33.4.93.37.28.24 FAX: +33.4.93.37.27.31 • GERMANY +49.9287.710 FAX: +49 9287.70435 • ISRAEL +972.3.557.0945 FAX: +972.3.558.9121
• ITALY + 39.2.300.11919 FAX: +39.2.300.11999 • JAPAN +81.42.729.0661 FAX: +81.42.729.3400 • SINGAPORE +65.788.6668 FAX: +65.788.0988
• SWEDEN +46.8.594.70590 FAX: +46.8.594.70581 • UK +44 191 514 8237 FAX: +44 1953 457 722 • USA: (610) 407-4800 FAX: (610) 640-9081
Dual Value, Chip Resistor Center Tap
Actual Size
SCHEMATIC
These tantalum chips combine excellent stability 0.07 %
(2000 hours, rated power at 70 °C) with great power han-
dling capacity. Two bonding pads per termination allow
greater flexibility in hybrid layout design.
RT
R1
R2
RT = R1 + R2 with R1 = R2 Standard
FEATURES
• Center tap feature
• Resistor material: self - passivating
Tantalum Nitride
• Silicon substrate for good power dissipation
• Low cost
TEST
SPECIFICATIONS
CONDITIONS
MATERIAL
TANTALUM NITRIDE
Resistance Range
50 ohms to 500 Kohms
for R
T = R1 + R2
TCR:
Tracking
± 5 ppm/°C
- 55 °C to + 155 °C
Absolute
± 100 ppm/°C (± 50 ppm/°C on Request)
- 55 °C to + 155 °C
Tolerance:
Ratio
1/1 standard
Absolute
± 0.5 %, ± 1 %, ± 2 %
Matching
± 0.5 % Standard
Power Dissipation
250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C
Stability
± 0.07 % typical, ± 0.1 Max.
2000 hrs. at +70 °C under Pn
Working Voltage
50 Volts DC on R
T
Operating Temperature Range
- 55 °C to + 155 °C
Storage Temperature Range
- 55 °C to + 155 °C
Noise
< - 35 dB typical
MIL-STD-202 Method 308
Thermal EMF
0.01 µV/°C
Shelf Life Stability
100 ppm
1 year at + 25 °C
STANDARD ELECTRICAL SPECIFICATIONS
ABS
TRACKING
TCR
100 ppm/
°C
5 ppm/
°C
ABS
RATIO
TOL
0.5 %
0.5 %
TYPICAL PERFORMANCE
RoHS
COMPLIANT




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