データシートサーチシステム |
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ES35P16-75IG2R データシート(PDF) 2 Page - Excel Semiconductor Inc. |
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ES35P16-75IG2R データシート(HTML) 2 Page - Excel Semiconductor Inc. |
2 / 35 page ES I ES I 2 Rev. 0E May 11 , 2006 ES25P16 Excel Semiconductor inc. ADVANCED INFORMATION The ES25P16 device is a 3.0 volt (2.7V to 3.6V) single power flash memory device. ES25P16 con- sists of thirty-two sectors, each with 512 Kb mem- ory. Data appears on SI input pin when inputting data into the memory and on the SO output pin when outputting data from the memory. The devices are designed to be programmed in-system with the standard system 3.0 volt Vcc supply. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory supports Sector Erase and Bulk Erase instructions. Each device requires only a 3.0 volt power supply (2.7V to 3.6V) for both read and write functions. Internally generated and regulated voltages are pro- vided for program operations. This device does not require Vpp supply. GENERAL PRODUCT DESCRIPTION BLOCK DIAGRAM PS Logic IO DATA PATH Array - R Array - L RD SRAM |
同様の部品番号 - ES35P16-75IG2R |
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同様の説明 - ES35P16-75IG2R |
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