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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 312, REV. A
SILICON SCHOTTKY RECTIFIER DIE
Ultra-low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection
Diode
Features:
•
Ultra Low Reverse Leakage Current
•
Soft Reverse Recovery at Low and High Temperature
•
Very Low Forward Voltage Drop
•
Low Power Loss, High Efficiency
•
High Surge Capacity
•
Guard Ring for Enhanced Durability and Long Term Reliability
•
Guaranteed Reverse Avalanche Characteristics
•
Electrically / Mechanically Stable during and after Packaging
•
Out Performs 200 Volt Ultra Fast Rectifiers
Maximum Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
Max. Average Forward Current
IF(AV)
50% duty cycle, rectangular
wave form
15
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
(1)
280
A
Non-Repetitive Avalanche
Energy
EAS
TJ = 25 °C, IAS = 0.6 A,
L = 40mH
11.4
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
0.6
A
Max. Junction Temperature
TJ
-
-65 to +200
°C
Max. Storage Temperature
Tstg
-
-65 to +200
°C
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 15A, Pulse, TJ = 25 °C
0.92
V
VF2
@ 15A, Pulse, TJ = 125 °C
0.76
V
Max. Reverse Current
IR1
@VR = 200V, Pulse,
TJ = 25 °C
15
µA
IR2
@VR = 200V, Pulse,
TJ = 125 °C
1.0
mA
Max. Junction Capacitance
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
300
pF
Max. Reverse Recovery
Time
trr
IF = 0.5 A, IR = 1.0 A,
IRM = 0.25 A, TJ = 25 °C
16
nsec
(1) in SHD package
SD125SCU200A/B/C