©2000 Fairchild Semiconductor International

September 2000

FM2G75US60 Rev. A

IGBT

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Symbol

Description

FM2G75US60

Units

Collector-Emitter Voltage

600

V

Gate-Emitter Voltage

± 20

V

Collector Curent

A

Pulsed Collector Current

150

A

Diode Continuous Forward Current

A

Diode Maximum Forward Current

150

A

Short Circuit Withstand Time

us

Maximum Power Dissipation

310

W

Operating Junction Temperature

-40 to +150

°C

Storage Temperature Range

-40 to +125

°C

Isolation Voltage

@ AC 1minute

2500

V

Mounting

Torque

Power Terminals Screw : M5

2.0

N.m

Mounting Screw : M5

2.0

N.m

FM2G75US60

Molding Type Module

General Description

Fairchild IGBT Power Module provides low conduction and

switching losses as well as short circuit ruggedness. It’s

designed for the applications such as motor control, UPS

and general inverters where short-circuit ruggedness is

required.

Features

• High Speed Switching

• High Input Impedance

• Fast & Soft Anti-Parallel FWD

Application

• AC & DC Motor Controls

• General Purpose Inverters

• Robotics

• Servo Controls

•UPS

Internal Circuit Diagram

C1

E2

G1

E1

G2

E2

E1/C2

Package Code : 7PM-AA