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TC7SA04FU データシート(PDF) 3 Page - Toshiba Semiconductor

部品番号 TC7SA04FU
部品情報  TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
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メーカー  TOSHIBA [Toshiba Semiconductor]
ホームページ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7SA04FU データシート(HTML) 3 Page - Toshiba Semiconductor

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TC7SA04F/FU
2002-12-13
3
Electrical Characteristics
DC Characteristics (Ta
==== ----40~85°C, 2.7 V < VCC <<<<==== 3.6 V)
DC Characteristics (Ta
==== ----40~85°C, 2.3 V <<<<==== VCC <<<<==== 2.7 V)
Characteristics
Symbol
Test Condition
VCC (V)
Min
Max
Unit
High level
VIH
¾
2.7~3.6
2.0
¾
Input voltage
Low level
VIL
¾
2.7~3.6
¾
0.8
V
IOH = -100 mA
2.7~3.6
VCC
- 0.2
¾
IOH = -12 mA
2.7
2.2
¾
IOH = -18 mA
3.0
2.4
¾
High level
VOH
VIN = VIL
IOH = -24 mA
3.0
2.2
¾
IOL = 100 mA
2.7~3.6
¾
0.2
IOL = 12 mA
2.7
¾
0.4
IOL = 18 mA
3.0
¾
0.4
Output voltage
Low level
VOL
VIN = VIH
IOL = 24 mA
3.0
¾
0.55
V
Input leakage current
IIN
VIN = 0~3.6 V
2.7~3.6
¾
±5.0
mA
Power off leakage current
IOFF
VIN, VOUT = 0~3.6 V
0
¾
10.0
mA
VIN = VCC or GND
2.7~3.6
¾
20.0
Quiescent supply current
ICC
VCC <= (VIN, VOUT) <= 3.6 V
2.7~3.6
¾
±20.0
Increase in ICC per input
DICC
VIH = VCC - 0.6 V
2.7~3.6
¾
750
mA
Characteristics
Symbol
Test Condition
VCC (V)
Min
Max
Unit
High level
VIH
¾
2.3~2.7
1.6
¾
Input voltage
Low level
VIL
¾
2.3~2.7
¾
0.7
V
IOH = -100 mA
2.3~2.7
VCC
- 0.2
¾
IOH = -6 mA
2.3
2.0
¾
IOH = -12 mA
2.3
1.8
¾
High level
VOH
VIN = VIL
IOH = -18 mA
2.3
1.7
¾
IOL = 100 mA
2.3~2.7
¾
0.2
IOL = 12 mA
2.3
¾
0.4
Output voltage
Low level
VOL
VIN = VIH
IOL = 18 mA
2.3
¾
0.6
V
Input leakage current
IIN
VIN = 0~3.6 V
2.3~2.7
¾
±5.0
mA
Power off leakage current
IOFF
VIN, VOUT = 0~3.6 V
0
¾
10.0
mA
VIN = VCC or GND
2.3~2.7
¾
20.0
Quiescent supply current
ICC
VCC <= (VIN, VOUT) <= 3.6 V
2.3~2.7
¾
±20.0
mA


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