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TC35C25COE データシート(PDF) 7 Page - TelCom Semiconductor, Inc

部品番号 TC35C25COE
部品情報  BICMOS PWM CONTROLLERS
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メーカー  TELCOM [TelCom Semiconductor, Inc]
ホームページ  http://www.telcom-semi.com
Logo TELCOM - TelCom Semiconductor, Inc

TC35C25COE データシート(HTML) 7 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
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6
5
4
3
1
2
8
BICMOS PWM CONTROLLERS
TC25C25
TC35C25
The 5k potentiometer sets a reference voltage at pin 2.
When ramp voltage of pin 5 reaches this reference voltage,
output drive pulse is active ON. Varying the discharge
resistor will vary the dead time. Increasing the discharge
resistor will effect an increase in the dead time.
BENCH TEST OPERATIONAL SIMULATION
WAVEFORMS
3V
OSC OUT
PIN 4
PIN 2
VOLTAGE
DEAD TIME
0.5V
CT
PIN 5
OUTPUT A
PIN 11
OUTPUT B
PIN 14
REPLACING BIPOLAR VERSIONS WITH CMOS
Although the pin-out and functions are the same for both
the Bipolar and CMOS versions, there are several differ-
ences that need to be taken into account. The reference
voltage on the TC35C25 is 4V instead of 5V and the
oscillator ramp is 3V, not 4V. The RT and CT values are
different for any particular frequency and dead-time require-
ment.
The most important difference is that the absolute
maximum rating of the VDD and VIN voltages for the TC35C25
is 18V, whereas the UC3525 is 40V.
8
1
14
2
13
3
12
4
11
5
10
6
9
7
15
16
VDD
OUTB
VIN
VREF
GND
OUTA
SHDN
CMPTR
OSC OUT
SYNC
IN+
IN–
CT
RT
DISCH
SOFT
+
1000pF
MET
0 to 1k
MET
.1
µf
V011
16V
GND
GND
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
1
0.8
0.6
0.4
0.2
0
Supply Current
vs. Frequency
CL = 2200pF
CL = 1000pF
CL = 470pF
CL = 10pF
VDD = 16V, TA +25°C
FREQUENCY (MHz)
Oscillator Frequency
vs. Ct and Rt
0
100
200
300
400
500
600
700
800
900
1000
800
600
400
200
Ct (pF)
Rt = 1k
Rt = 2k
Rt = 5k
Rt = 10k
Rt = 20k
VDD = VIN = 16V, TA +25°C
0
200
400
600
800
1000
3000
2500
2000
1500
1000
500
0
Dead Time
vs. Ct and Discharge Resistor
DISCHARGE RESISTOR (
Ω)
Ct = 1000pF
Ct = 500pF
Ct = 330pF
Ct = 100pF
VDD = 16V, TA +25°C, Rt = 10k


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