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TC35C25COE データシート(PDF) 7 Page - TelCom Semiconductor, Inc |
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TC35C25COE データシート(HTML) 7 Page - TelCom Semiconductor, Inc |
7 / 7 page 4-117 TELCOM SEMICONDUCTOR, INC. 7 6 5 4 3 1 2 8 BICMOS PWM CONTROLLERS TC25C25 TC35C25 The 5k potentiometer sets a reference voltage at pin 2. When ramp voltage of pin 5 reaches this reference voltage, output drive pulse is active ON. Varying the discharge resistor will vary the dead time. Increasing the discharge resistor will effect an increase in the dead time. BENCH TEST OPERATIONAL SIMULATION WAVEFORMS 3V OSC OUT PIN 4 PIN 2 VOLTAGE DEAD TIME 0.5V CT PIN 5 OUTPUT A PIN 11 OUTPUT B PIN 14 REPLACING BIPOLAR VERSIONS WITH CMOS Although the pin-out and functions are the same for both the Bipolar and CMOS versions, there are several differ- ences that need to be taken into account. The reference voltage on the TC35C25 is 4V instead of 5V and the oscillator ramp is 3V, not 4V. The RT and CT values are different for any particular frequency and dead-time require- ment. The most important difference is that the absolute maximum rating of the VDD and VIN voltages for the TC35C25 is 18V, whereas the UC3525 is 40V. 8 1 14 2 13 3 12 4 11 5 10 6 9 7 15 16 VDD OUTB VIN VREF GND OUTA SHDN CMPTR OSC OUT SYNC IN+ IN– CT RT DISCH SOFT + – 1000pF MET 0 to 1k MET .1 µf V011 16V GND GND TYPICAL CHARACTERISTICS 0 5 10 15 20 25 30 35 40 1 0.8 0.6 0.4 0.2 0 Supply Current vs. Frequency CL = 2200pF CL = 1000pF CL = 470pF CL = 10pF VDD = 16V, TA +25°C FREQUENCY (MHz) Oscillator Frequency vs. Ct and Rt 0 100 200 300 400 500 600 700 800 900 1000 800 600 400 200 Ct (pF) Rt = 1k Rt = 2k Rt = 5k Rt = 10k Rt = 20k VDD = VIN = 16V, TA +25°C 0 200 400 600 800 1000 3000 2500 2000 1500 1000 500 0 Dead Time vs. Ct and Discharge Resistor DISCHARGE RESISTOR ( Ω) Ct = 1000pF Ct = 500pF Ct = 330pF Ct = 100pF VDD = 16V, TA +25°C, Rt = 10k |
同様の部品番号 - TC35C25COE |
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同様の説明 - TC35C25COE |
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