データシートサーチシステム |
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STG8206 データシート(PDF) 1 Page - SamHop Microelectronics Corp. |
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STG8206 データシート(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 7 page 20 Dual N-Channel E nhancement Mode Field E ffect Transistor S urface Mount Package. ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage VGS 12 V Drain Current-Continuous @ TJ=25 C -Pulsed ID 6 40 2 1.5 A A A W IDM Drain-S ource Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and S torage Temperature R ange TJ, TS TG -55 to 150 C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient R JA 85 /W C a a a a b S amHop Microelectronics C orp. Dec,27.2004 ver1.2 1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( mW ) Max 20V 6A F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. 20 @ V GS = 4.5V (T OP V IE W) T S S OP 1 1 2 3 4 8 7 6 5 D1 S 1 S 1 G 1 D2 S 2 S 2 G 2 S T G 8206 30 @ V GS = 2.5V |
同様の部品番号 - STG8206 |
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同様の説明 - STG8206 |
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