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AM29LV640MT100 データシート(PDF) 3 Page - SPANSION |
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3 / 66 page This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 26190 Rev: C Amendment/+3 Issue Date: February 12, 2004 Refer to AMD’s Website (www.amd.com) for the latest information. For new designs, S29GL064M supercedes Am29LV640MT/B and is the factory-recommended migration path for this device. Please refer to the S29GLxxxM Family Datasheet for specifications and ordering information. Am29LV640MT/B 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit ™ 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES ■ Single power supply operation — 3 V for read, erase, and program operations ■ Manufactured on 0.23 µm MirrorBit process technology ■ SecSi ™ (Secured Silicon) Sector region — 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence — May be programmed and locked at the factory or by the customer ■ Flexible sector architecture — One hundred twenty-seven 32 Kword/64-Kbyte sectors — Eight 4 Kword/8 Kbyte boot sectors ■ Compatibility with JEDEC standards — Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection ■ Minimum 100,000 erase cycle guarantee per sector ■ 20-year data retention at 125 °C PERFORMANCE CHARACTERISTICS ■ High performance — 90 ns access time — 25 ns page read times — 0.5 s typical sector erase time — 22 µs typical effective write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word/byte updates — 4-word/8-byte page read buffer — 16-word/32-byte write buffer ■ Low power consumption (typical values at 3.0 V, 5 MHz) — 30 mA typical active read current — 50 mA typical erase/program current — 1 µA typical standby mode current ■ Package options — 48-pin TSOP — 63-ball Fine-pitch BGA — 64-ball Fortified BGA SOFTWARE & HARDWARE FEATURES ■ Software features — Program Suspend & Resume: read other sectors before programming operation is completed — Erase Suspend & Resume: read/program other sectors before an erase operation is completed — Data# polling & toggle bits provide status — Unlock Bypass Program command reduces overall multiple-word programming time — CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ■ Hardware features — Sector Group Protection: hardware-level method of preventing write operations within a sector group — Temporary Sector Unprotect: V ID-level method of changing code in locked sectors — WP#/ACC input: Write Protect input (WP#) protects top or bottom two sectors regardless of sector protection settings ACC (high voltage) accelerates programming time for higher throughput during system production — Hardware reset input (RESET#) resets device — Ready/Busy# output (RY/BY#) indicates program or erase cycle completion |
同様の部品番号 - AM29LV640MT100 |
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同様の説明 - AM29LV640MT100 |
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