LMN400B01-7 datasheet(7/10 Pages) DIODES

部品番号	LMN400B01-7

部品情報	400mA LOAD SWITCH FEATURING PNP TRANSISTOR AND N-MOSFET WITH GATE PULL-DOWN RESISTOR

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7 / 10 page

DS30699 Rev. 5 - 2

7 of 10

LMN400B01

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T , JUNCTION TEMPERATURE (

°C)

j

Fig. 16 Static Drain-Source On-State Resistance

vs. Junction Temperature

0.5

1

1.5

2

2.5

-75 -50

-25

0

25

50

75

100 125 150

V

= 10V

GS

Pulsed

I = 115mA

D

I = 50mA

D

0.001

0.01

0.1

1

0

0.5

1

1.5

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 17 Reverse Drain Current

vs. Source-Drain Voltage

V

= 5V

GS

Pulsed

T = 150

°C

A

T = 125

°C

A

T = 85

°C

A

T = 25

°C

A

T = -55

°C

A

0.5

1

1.5

2

2.5

0.001

0.01

0.1

1

0

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Fig. 18 Reverse Drain Current

vs. Body Diode Forward Voltage

=25

C

T = 25°C

A

Pulsed

V = 5V

GS

V = 10V

GS

I , DRAIN CURRENT (A)

D

Fig. 19 Forward Transconductance

vs. Drain Current (V

> I *R

)

DS

D

DS(ON)

0

100

200

300

400

500

600

700

800

900

0

0.2

0.4

0.6

0.8

T=

A

-55

°C

T=

A

25

°C

T=

A

85

°C

T=

A

150

°C

T=

A

125

°C

同様の部品番号 - LMN400B01-7

メーカー	部品番号	データシート	部品情報
Diodes Incorporated	LMN400E01	549Kb / 10P	400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET DS30750 Rev. 4 - 2
	LMN400E01-7	549Kb / 10P	400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET DS30750 Rev. 4 - 2
	LMN400E01-7	290Kb / 8P	400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET
	LMN400E01	290Kb / 8P	400 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND ESD PROTECTED N-MOSFET

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同様の説明 - LMN400B01-7

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